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PTFA043002E
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 - 860 MHz
Description
The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS (R) push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA043002E Package H-30275-4
Features
Two-tone Drive-up at 800 MHz
(in broadband circuit) VDD = 32 V, IDQ = 1.55 A,
0 -10 -20
* *
45 40
Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent < -33 dBc Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Low HCI drift Pb-free and RoHS compliant Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power
1 = 799.5 MHz, 2 = 800.5 MHz Efficiency 3rd Order
*
Drain Efficiency (%)
35 30 25 20 15 10 5
IM3, 5, 7 (dBc)
-30 -40 -50 -60 -70 -80 -90 0 50 100 150 200 250 300
* * * * *
7th 5th
0 350
Output Power (W PEP)
RF Characteristics
ATSC 8VSB Characteristics (broadband fixture, push-pull configuration)
(VDD = 32 V, POUT = 100 W AVG, IDQ = 1.55 A, = 800 MHz)
Characteristic
Common Source Power Gain Drain Efficiency FIrst Adjacent
Symbol
Gps D IMD
Min
-- -- --
Typ
16 28 -33
Max
-- -- --
Unit
dB % dBc
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 03.1, 2009-02-20
PTFA043002E
RF Characteristics (cont.)
Two-tone Measurements (tested in narrowband test fixture)
VDD = 32 V, IDQ = 1.55 A, POUT = 300 WPEP, = 860 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps D IMD
Min
16 38 --
Typ
17.5 41 -29
Max
-- -- -28
Unit
dB % dBc
DC Characteristics (one side)
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA/side VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.08 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A W V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 0.75 A/side VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 300 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 761 4.35 -40 to +150 0.23
Unit
V V C W W/C C C/W
Ordering Information
Type
PTFA043002E
Package Outline
H-30275-4
Package Description
Thermally-enhanced, flange mount
Marking
PTFA043002E
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03.1, 2009-02-20
PTFA043002E
Typical Performance (data taken in a broadband test fixture)
Two-tone IMD Performance
VDD = 32 V, IDQ = 1.55 A, IMD = -28 dBc
8VSB Performance vs. Frequency @ 100 W Average Power
VDD = 32 V, IDQ = 1.55 A, IMD = -28 dBc
400
60
-30
30
Efficiency
Drain Efficiency (%)
Output Power, PEP (W)
Output Power (PEP)
200 40
Adjacent (dBc)
300
50
-34
22
Adjacent
-36 -38 -40 400 18 14 10 900
100
Drain Efficiency
30
0 400
500
600
700
800
20 900
500
600
700
800
Frequency (MHz)
Frequency (MHz)
Analog NTSC Performance
VDD = 32 V, IDQ = 1.55 A
350 55
Gain vs. Frequency
VDD = 32 V, IDQ = 1.55 A
18.0 17.5
Output Power, 25% Sync Compression (W, Pk, Sync.)
Small Signal Gain (dB)
300 250 200 150 100 50 0 400
45
Drain Efficiency (%)
Output Power Efficiency
50
17.0 16.5 16.0 15.5 15.0 14.5 14.0 400 500 600 700 800 900
40 35 30 25 20 900
500
600
700
800
Frequency (MHz)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 03.1, 2009-02-20
Drain Efficiency (%)
-32
26
PTFA043002E
Typical Performance (cont.)
Two-tone Drive-up at 800 MHz
(in narrowband circuit) VDD = 32 V, IDQ = 1.55 A, 1 = 799.5 MHz, 2 = 800.5 MHz
25 20
DVB Adjacent Channel Power
VDD = 32 V, IDQ = 1.55 A, 63 W DVB s ignal
-50
0 -10
Efficiency +4.2 MHz
Drain Efficiency 3rd Order Gain 5th
40
ACP (4.2 MHz) (dBc)
Drain Efficiency (%)
-55 -60 -65 -70
IM3, 5, 7 (dBc)
-20 -30 -40 -50 -60 -70 -80 0 50 100 150 200
30 25 20 15
15 10 5
-4.2 MHz
-75 0 450 500 550 600 650 700 750 800 850 900
7th
10 5
250
300
0 350
Frequency (MHz)
Output Power, PEP (W)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.29 A 0.88 A 1.47 A 2.20 A 4.41 A 6.61 A 8.81 A 11.02 A
Normalized Bias Voltage (V)
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80
100
Case Temperature (C)
Data Sheet
4 of 10
Rev. 03.1, 2009-02-20
Gain (dB), Efficiency (%)
35
PTFA043002E
Broadband Circuit Impedance Data
VDD = 28 V, IDQ = 2.0A, POUT = 30 W AVG Two-carrier WCDMA
Z Source Z Load
D S
G G
D
NER A
Frequency
MHz 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 R
Z Source
jX -4.61 -3.71 -2.96 -2.36 -1.90 -1.61 -1.47 -1.44 -1.47 -1.50 -1.50 -1.46 -1.42 -1.41 -1.46 -1.54 -1.61 -1.54 -1.27 R 1.78 1.85 1.99 2.18 2.41 2.64 2.85 3.01 3.10 3.15 3.17 3.20 3.24 3.30 3.33 3.30 3.17 2.95 2.67 3.00 3.02 3.18 3.43 3.75 4.10 4.42 4.66 4.79 4.84 4.84 4.82 4.82 4.83 4.80 4.69 4.43 4.04 3.57
Z Load
jX -3.26 -2.63 -2.09 -1.64 -1.28 -0.87 -0.77 -0.70 -0.63 -0.53 -0.42 -0.31 -0.22 -0.18 -0.16 -0.13 -0.01 0.27 -1.03
Z0 = 50
Z Load
0 .0 0.1
OW A RD L OAD G THS T EL E N
900 MHz
900 MHz
Z Source
450 MHz
0. 1
450 MHz
- WA < --
V
0 .2
3 0.
Data Sheet
5 of 10
Rev. 03.1, 2009-02-20
0.2
0 .1
PTFA043002E
Reference Circuit
C33 0.001F R10 1.3K V R11 1.2K V
QQ1 LM7805
Q1 BCP56 C34 0.001F R12 22V C35 0.001F R13 2KV
VDD V BIAS VBIAS
R14 100 V
V DD
R7 3.3KV C10 0.1F C9 75pF R8 10V C11 10F 35V R9 5.1KV C12 75pF C17 75pF C18 1F C19 1F C17 75pF C20 10F 50V L1 C21 10F 50V C22 0.01F
TB2
l1 3 l9 l10 l11 l12
DUT
l1 4 l16 l18
TB 4
l20
l22 l24
Sl2
TB 3
l8
Sl 1
TB1 C2 15pF
l2
C3 75pF
C4 2.4pF
C5 8.2pF
C13 8.2pF
C14 4.8pF
C15 2.4pF C16 75pF
C30 6.8pF
C31 6.2pF
l25 l23
VDD
L2
V BIAS RF_IN
l3
l4
l5
l6 l7 l1 5
l17
l19
l21
l1
C1 2.7pF R1 100 V R2 2KV R3 22V R4 3.3KV R5 10 V C6 0.1F C7 10F 35V R6 5.1KV C8 75pF
l26
C32 2.7pF
RF_OUT
C24 75pF
C25 1F
C26 1F
C27 10F 50V
C28 10F 50V
C29 0.01F
a043002e_bd-02_070212
Reference circuit schematic for 470 to 860 MHz--rated for 300 W (PEP) only
Circuit Assembly Information
DUT Circuit board PTFA043002E 0.25 mm [.010"] over .635 mm [.025"] thick, r = 10.2 copper: 10 mils top 25 mils bottom LDMOS transistor Rogers 3010, multilayer
Microstrip
TB1, TB2, TB3, TB4 Sl1, Sl2
Electrical Characteristics at 860 MHz1 Dimensions: L x W (mm)
Broadside coupled striplines 0.017 0.250 0.004 0.049 0.038 0.067 0.055 0.216 0.307 0.045 0.112 0.024 0.022 , 15.6 , 39.0 , 26.0 , 6.1 , 6.1 , 4.2 , 3.8 , 41.0 , 41.0 , 3.8 , 3.8 , 3.8 , 4.7 14.63 x 1.70 33.02 x 1.32 0.51 x 2.54 5.59 x 15.24 4.45 x 15.24 7.62 x 22.86 6.25 x 25.40 28.45 x 1.22 40.39 x 1.22 5.08 x 25.40 12.70 x 25.40 2.74 x 25.40 2.54 x 20.32 2.54 x 20.32
Dimensions: L x W (in.)
0.576 x 0.067 0.075 x 0.067 1.300 x 0.052 0.020 x 0.100 0.220 x 0.600 0.175 x 0.600 0.300 x 0.900 0.246 x 1.000 1.120 x 0.048 1.590 x 0.048 0.200 x 1.000 0.500 x 1.000 0.108 x 1.000 0.100 x 0.800
l1, l26 l2, l8, l24, l25 l3, l9 l4, l10 l5, l11 l6, l12 l7, l13 l14, l15 l16, l17 l18, l19 l20, l21 l22, l23
1Electrical characteristics are rounded.
Data Sheet
6 of 10
Rev. 03.1, 2009-02-20
PTFA043002E
Reference Circuit (cont.)
C11 R7
C10
C12
R9 R8 QQ1 Q1
C18
VDD
C20
C19 C21 C23 C22 L1
VDD
C33
VDD
R13 R12 C1
C34 R11 C35 R10 R14 C2
C9
RF_IN
C4
C5
C13 C14
C15
C17
C31 C32 C30
RF_OUT
C3
C16
R2 R3
R1 C28 C29 L2 C25
VDD
R4 C7
R5
C27
C6 R6 C8
C24
C26
a043002e_cd-02_070212
C10 C11 R7
C12 R9 R8
VDD
C33 QQ1 R13 R12
Q1
C34 R11 C35 R10 R14
a043002e_cd-dtl_0702212
Reference circuit assembly diagram* (not to scale)--rated for 300 W (PEP) only
*Gerber Files for this circuit available on request. Data Sheet 7 of 10 Rev. 03.1, 2009-02-20
PTFA043002E
Reference Circuit (cont.)
Component
C1, C32 C2 C3, C8, C9, C12, C16, C17, C18, C24 C4, C15 C5, C13 C6, C10 C7, C11 C14 C19, C20, C25, C26 C21, C22, C27, C28 C23, C29 C30 C31 C33, C34, C35 L1, L2 Q1 QQ1 R1, R14 R2, R13 R3, R12 R4, R7 R5, R8 R6, R9 R10 R11
Description
Ceramic capacitor, 2.7 pF Capacitor, 15 pF Ceramic capacitor, 75 pF Ceramic capacitor, 2.4 pF Ceramic capacitor, 8.2 pF Capacitor, 0.1 F Tantalum capacitor, 10 F, 35 V Ceramic capacitor, 4.8 pF Capacitor, 1 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 0.01 F Ceramic capacitor, 6.8 pF Ceramic capacitor, 6.2 pF Capacitor, 0.001 F Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 100 ohms Potentiometer 2 k-ohms Chip Resistor 22 ohms Chip Resistor 3.3 k-ohms Chip Resistor 10 ohms Chip Resistor 5.1 k-ohms Chip Resistor 1.0 k-ohms Chip Resistor 1.1 k-ohms
Suggested Manufacturer
ATC ATC ATC ATC ATC Digi-Key Digi-Key ATC ATC Garrett Electronics ATC ATC ATC Digi-Key Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
100B 2R7 100B 150 100B 750 100B 2R4 100B 8R2 PCC104BCT-ND PCS6106TR-ND 100B 4R8 920C105 TPS106K050R0400 200B 103 100B 6R8 100B 6R2 PCC1772CT-ND BDS 4.6/3/8.9-4S2 BCP56 LM7805 P100ECT-ND 3224W-202ETR-ND P22KECT-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND P1KGCT-ND P1.1KGCT-ND
See next page for package information
Data Sheet
8 of 10
Rev. 03.1, 2009-02-20
PTFA043002E
Package Outline Specifications Package H-30275-4
2X 455 X 1.19 [.047]
C L
13.72 [.540]
C L
2X R 1.59 [.063]
D
16.610.51 [.654.020] 9.40 +0.10 -0.15 [.370 +.004 ] -.006
D
C L
2X 3.18 [.125]
LID 9.14 -0.15 [.360 +.004 ] -.006 Flange 10.16 [.400]
+0.10
S
4X 3.230.25 [.127.010]
G
G
4X 11.68 [.460]
35.56 [1.400]
31.240.28 [1.230.011]
1.63 [.064]
4.550.38 [.179.015] 0.038 [.0015] -AH-30275-4
2.18 [.086] SPH 41.15 [1.620]
Diagram Notes--unless otherwise specified: 1. Lead thickness: 0.13 +0.051/-0.025 [.005 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 11.14 micron 0.38 micron [45 microinch 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 10
Rev. 03.1, 2009-02-20
PTFA043002E Confidential, Limited Internal Distribution Revision History: 2009-02-20 2005-11-18, Data Sheet Previous Version: Page 6 1, 2, 9 8 Subjects (major changes since last revision) Revise circuit board information. Update package designation. Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03.1, 2009-02-20

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